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ME1303AT3

Matsuki
Part Number ME1303AT3
Manufacturer Matsuki
Description P-Channel Enhancement Mode Mosfet
Published Mar 20, 2018
Detailed Description P-Channel Enhancement MOSFET ME1303AT3/ME1303AT3-G GENERAL DESCRIPTION The ME1303AT3 is the P-Channel logic enhancemen...
Datasheet PDF File ME1303AT3 PDF File

ME1303AT3
ME1303AT3

Overview
P-Channel Enhancement MOSFET ME1303AT3/ME1303AT3-G GENERAL DESCRIPTION The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION (SOT-323) Top View FEATURES ● -20V/-3.
4A,RDS(ON)=95mΩ@VGS=-4.
5V ● -20V/-2.
4A,RDS(ON)=120mΩ@VGS=-2.
5V ● -20V/-1.
7A,RDS(ON)=180mΩ@VGS=-1.
8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Swi...


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