N-Channel MOSFET
Description
N - Channel 100-V (D-S) MOSFET
MEBSS123/MEBSS123-G
GENERAL DESCRIPTION
The MEBSS123 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage appli...
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