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KPDE0301M51

KYOSEMI
Part Number KPDE0301M51
Manufacturer KYOSEMI
Description InGaAs Photodiode
Published Mar 20, 2018
Detailed Description InGaAs Photodiode Features • NIR sensitive up to 1700nm • Plastic mold package • Various package option (Ceramic, Metal ...
Datasheet PDF File KPDE0301M51 PDF File

KPDE0301M51
KPDE0301M51

Overview
InGaAs Photodiode Features • NIR sensitive up to 1700nm • Plastic mold package • Various package option (Ceramic, Metal stem, TO-CAN) Applications • Optical switches • Sensors and industrial controls KPDE0301M51 1.
Cathode 2.
Anode Unit: mm Absolute Maximum Ratings Parameter Reverse voltage Reverse current Forward current Operating temperature Storage temperature Symbol VR IR IF Topr Tstg Value 20 500 50 -20 to +80 -30 to +100 Unit Note V µA mA oC Avoid dew condensation oC Avoid dew condensation Electrical and Optical Characteristics (Ta=25oC unless otherwise noted) Parameter Active diameter Sensitive wavelength Responsivity Dark current Terminal capacitance Symbol D λ R ID Ct Min.
900 - Typ.
φ0.
3 1500 (λp) 0.
9 4 Max.
1700 1 6 Unit Test Condition mm nm λp=Peak wavelength A/W λ=1550nm nA VR=5V pF VR=5V, f=1MHz (1504/KPDE0301M51) http://www.
kyosemi.
co.
jp/ InGaAs Photodiode KPDE0301M51 Dark Current - Reverse Voltage 1 Ta=25oC 0.
1 Dark current (nA) 0.
...


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