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BD535

Fairchild Semiconductor
Part Number BD535
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Mar 23, 2005
Detailed Description BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD5...
Datasheet PDF File BD535 PDF File

BD535
BD535


Overview
BD533/535/537 BD533/535/537 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD534, BD536 and BD538 respectively 1 TO-220 2.
Collector 3.
Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 : BD533 : BD535 : BD537 1.
Base Value 45 60 80 45 60 80 45 60 80 5 8 1 50 150 - 65 ~ 150 Units V V V V V V V V V V A A W °C °C VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO IC IB PC TJ TSTG Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current : BD533 : BD535 : BD537 Collector Cut-off Current : BD533 : BD535 : BD537 Emitter Cut-off Current * DC Current Gain : BD533/535 : BD537 : ALL DEVICE : BD533/535 : BD537 : ALL DEVICE : ALL DEVICE Test Condition VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 2V, IC = 500mA VCE = 2V, IC = 2A 20 15 40 25 15 30 15 40 20 0.
8 1.
5 3 12 75 100 0.
8 V V V MHz Min.
Typ.
Max.
100 100 100 100 100 100 1 Units µA µA µA µA µA µA mA ICES IEBO hFE hFE hFE Groups J K VCE = 2V, IC = 2A VCE = 2V, IC = 3A VCE = 2V, IC = 2A VCE = 2V, IC = 3A IC = 2A, IB = 0.
2A IC = 6A, IB = 0.
6A VCE = 2V, IC = 2A VCE = 1V, IC = 500mA VCE(sat) VBE(on) fT * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product * Pulse Test: PW =300µs, duty Cycle =1.
5% Pulsed ©2000 Fairchild Semiconductor International Rev.
A, February 2000 BD533/535/537 Typical characteristics 1000 1 100 VCE(sat)[V], SATURATION VOLTAGE VCE = 2V IC = 10 IB hFE, DC CURRENT GAIN 0.
1 10 0.
01 0.
1 1 10 0.
01 0.
1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure ...



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