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HPA600R760MB

HUAJING MICROELECTRONICS
Part Number HPA600R760MB
Manufacturer HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Published Mar 22, 2018
Detailed Description Silicon N-Channel Power MOSFET HPA600R760MB General Description： HPA600R760MB, the silicon N-channel Enhanced MOSFETs, ...
Datasheet PDF File HPA600R760MB PDF File

HPA600R760MB
HPA600R760MB

Overview
Silicon N-Channel Power MOSFET HPA600R760MB General Description： HPA600R760MB, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package type is TO-220F, which accords with the RoHS standard.
VDSS(Tjmax) ID PD(TC=25℃) RDS(ON)Typ Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tj= 25℃ unless otherwise s...


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