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HPU600R700DN

Part Number	HPU600R700DN
Manufacturer	HUAJING MICROELECTRONICS
Description	Silicon N-Channel Power MOSFET
Published	Mar 22, 2018
Detailed Description	Silicon N-Channel Power MOSFET HPU600R700DN ○R General Description： HPU600R700DN, the silicon N-channel Enhanced VDM...
Datasheet	HPU600R700DN PDF File

Overview

Silicon N-Channel Power MOSFET HPU600R700DN ○R General Description： HPU600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Superior switching performance l Low on resistance(Rdson≤0.
7Ω) l Low gate charge (Typical Data:26nC) l Low reverse transfer capacitances(Typical:23.
8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of a...

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HPU600R700DN Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

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