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HPP600R1K0DN

Part Number	HPP600R1K0DN
Manufacturer	HUAJING MICROELECTRONICS
Description	Silicon N-Channel Power MOSFET
Published	Mar 22, 2018
Detailed Description	Silicon N-Channel Power MOSFET HPP600R1K0DN ○R General Description： HPP600R1K0DN, the silicon N-channel Enhanced VDM...
Datasheet	HPP600R1K0DN PDF File

Overview

Silicon N-Channel Power MOSFET HPP600R1K0DN ○R General Description： HPP600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Superior switching performance l Low on resistance(Rdson≤1Ω) l Low gate charge (Typical Data:20.
2nC) l Low reverse transfer capacitances(Typical:17.
8pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of...

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HPP600R1K0DN Silicon N-Channel Power MOSFET - HUAJING MICROELECTRONICS

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