FNK5530PD
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK55P30PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized a...
