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TSM2NB60

Taiwan Semiconductor
Part Number TSM2NB60
Manufacturer Taiwan Semiconductor
Description 600V N-Channel Power MOSFET
Published Apr 5, 2018
Detailed Description TSM2NB60 Taiwan Semiconductor N-Channel Power MOSFET 600V, 2A, 4.4Ω FEATURES ● Advanced planar process ● 100% avalanch...
Datasheet PDF File TSM2NB60 PDF File

TSM2NB60
TSM2NB60

Overview
TSM2NB60 Taiwan Semiconductor N-Channel Power MOSFET 600V, 2A, 4.
4Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) 600 V 4.
4 Ω Qg 9.
4 nC APPLICATION ● Power Supply ● Lighting TO-220 ITO-220 TO-251(IPAK) TO-252(DPAK) NotTRSecMoT2SmNMBm2e60NndBCe6Zd0CI Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER LIMIT SYMBOL IPAK/DPAK ITO-220 Drain-Source Voltage Gate-Source Voltage Co...


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