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TIP117

Part Number	TIP117
Manufacturer	GME
Description	PNP Epitaxial Silicon Darlington Transistor
Published	Apr 10, 2018
Detailed Description	Production specification PNP Epitaxial Silicon Darlington Transistor TIP117 FEATURES  Monolithic Construction With B...
Datasheet	TIP117 PDF File

Overview

Production specification PNP Epitaxial Silicon Darlington Transistor TIP117 FEATURES  Monolithic Construction With Built in Base -Emitter Shunt Resistors.
Pb Lead-free  Complementary to TIP112.
 High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.
 Low Collector-Emitter Saturation Voltage.
 Industrial Use.
TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ -100 V -5 V -2 A -4 -50 mA 2 W 50 ...

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