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2SB1218A

Part Number	2SB1218A
Manufacturer	GME
Description	PNP Silicon Transistor
Published	Apr 20, 2018
Detailed Description	PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity. ...
Datasheet	2SB1218A PDF File

Overview

PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity.
 Complements the 2SD1819A.
Pb Lead-free APPLICATIONS  For general purpose amplification.
Production specification 2SB1218A ORDERING INFORMATION Type No.
Marking 2SB1218A BQ/BR/BS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -200 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F034 Rev.
A www.
gmesemi.
com 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SB1218A ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO E...

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