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BLA6G1011-200R

Part Number	BLA6G1011-200R
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product pr...
Datasheet	BLA6G1011-200R PDF File

Overview

BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS transistor Rev.
6 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1.
Test information Typical RF performance at Tcase = 25 C.
Test signal f (MHz) VDS PL Gp D tr (V) (W) (dB) (%) (ns) Typical RF performance in a class-AB production test circuit for SOT502A pulsed RF 1030 to 1090 28 200 20 65 10 Typical RF performance in a Gullwing application for SOT502C and SOT502D pulsed RF 1030 to 1090 28 200 20 65 15 tf (ns) 6 6 1.
2 Features and benefits  Typical pulsed RF performance at frequencies...

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BLA6G1011-200R Power LDMOS transistor - Ampleon

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