Power LDMOS transistor
Description
BLC8G09XS-400AVT
Power LDMOS transistor
Rev. 2 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty produ...
Similar Datasheet
