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BLC10G18XS-400AVT

Ampleon
Part Number BLC10G18XS-400AVT
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLC10G18XS-400AVT Power LDMOS transistor Rev. 1 — 19 April 2018 Product data sheet 1. Product profile 1.1 General des...
Datasheet PDF File BLC10G18XS-400AVT PDF File

BLC10G18XS-400AVT
BLC10G18XS-400AVT

Overview
BLC10G18XS-400AVT Power LDMOS transistor Rev.
1 — 19 April 2018 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit (VDS = 32 V) and production circuit (VDS = 28 V); IDq = 860 mA (main); VGS(amp)peak = 0.
7 V, unless otherwise specified.
Test signal f (MHz) VDS PL(AV) Gp D ACPR (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 56 16.
5 49.
0 29.
7 [1] 1805 to 1880 32 93 17.
0 49.
5 29.
5 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
9 dB at 0.
01 % probability on CCDF.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excellent thermal stability  Lower output capacitance for improved performance in Doherty applica...


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