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BLF9G38-10G

Part Number	BLF9G38-10G
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 26, 2018
Detailed Description	BLF9G38-10G Power LDMOS transistor Rev. 1 — 19 October 2017 Product data sheet 1. Product profile 1.1 General descrip...
Datasheet	BLF9G38-10G PDF File

Overview

BLF9G38-10G Power LDMOS transistor Rev.
1 — 19 October 2017 Product data sheet 1.
Product profile 1.
1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 3400 to 3600 70 28 2 17.
7 26 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.
2 Features and benefits  High efficiency  Integrated ESD protection  Excellent ruggednes...

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BLF9G38-10G Power LDMOS transistor - Ampleon

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