Power LDMOS transistor
Description
BLP8G05S-200; BLP8G05S-200G
Power LDMOS transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base stations applications at frequencies from 400 MHz to 500 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 C, IDq = 2 mA in an application circuit.
Test signal
f
V...
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