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BF820

General Semiconductor
Part Number BF820
Manufacturer General Semiconductor
Description Small Signal Transistors
Published Mar 23, 2005
Detailed Description BF820, BF822 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ NPN Silicon Epitaxial ...
Datasheet PDF File BF820 PDF File

BF820
BF820

Overview
BF820, BF822 Small Signal Transistors (NPN) SOT-23 .
122 (3.
1) .
118 (3.
0) .
016 (0.
4) 3 FEATURES ♦ NPN Silicon Epitaxial Planar Transistors Top View .
056 (1.
43) .
052 (1.
33) especially suited for application in class-B video output stages of TV receivers and monitors.
♦ As complementary types, the PNP transistors BF821 and BF823 are recommended.
1 2 max.
.
004 (0.
1) .
007 (0.
175) .
005 (0.
125) .
037(0.
95) .
037(0.
95) .
045 (1.
15) .
037 (0.
95) .
016 (0.
4) .
016 (0.
4) .
102 (2.
6) .
094 (2.
4) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx.
0.
008 g Marking code BF820 = 1V BF822 = 1X Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range 1) Value 300 250 250 300 5 50 100 3001) 150 –65 to +150 Unit V V V V V mA mA mW °C °C BF820 BF822 BF822 BF820 VCBO VCBO VCEO VCER VEBO IC ICM Ptot Tj TS Device on fiberglass substrate, see layout 4/98 BF820, BF822 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Collector-Base Breakdown Voltage at IC = 100 µA, IB = 0 Collector-Emitter Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at RBE = 2.
7 kΩ, IC = 10 mA Emitter-Base Breakdown Voltage at IE = 100 µA, IB = 0 Collector-Base Cutoff Current at VCB = 200 V, IE = 0 Collector-Emitter Cutoff Current at RBE = 2.
7 kΩ, VCE = 250 V at RBE = 2.
7 kΩ, VCE = 200 V, Tj = 150 °C Collector Saturation Voltage at IC = 30 mA, IB = 5 mA DC Current Gain at VCE = 20 V, IC = 25 mA Gain-Bandwidth Product at VCE = 10 V, IC = 10 mA Feedback Capacitance at VCE = 30 V, IC = 0, f = 1 MHz Thermal Resistance Junction to Ambient Air 1) Min.
300 250 2...


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