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BF908WR

NXP
Part Number BF908WR
Manufacturer NXP
Description N-channel dual-gate MOS-FET
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Se...
Datasheet PDF File BF908WR PDF File

BF908WR
BF908WR

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.
DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT343R package.
The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS − − − − 36 2.
4 20 − MIN.
− − − − 43 3.
1 30 1.
5 TYP.
Marking code: MD.
BF908WR PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d 3 4 g2 g1 2 1 s,b Top view MAM198 Fig.
1 Simplified outline (SOT343R) and symbol.
MAX.
12 40 300 150 50 4 45 2.
5 UNIT V mA mW °C mS pF fF dB 1995 Apr 25 2 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS ID IG1 IG2 Ptot Tstg Tj Note 1.
Device mounted on a printed-circuit board.
PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature up to Tamb = 45 °C; see Fig.
2; note 1...


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