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BL3N60

GME
Part Number BL3N60
Manufacturer GME
Description N-Channel Power Mosfet
Published May 18, 2018
Detailed Description 3A,600V N-Channel Power Mosfet FEATURES  VDS = 600V , ID = 3A  RDS(ON) =3.6Ω@ VGS = 10V  Ultra low gate charge ( ty...
Datasheet PDF File BL3N60 PDF File

BL3N60
BL3N60

Overview
3A,600V N-Channel Power Mosfet FEATURES  VDS = 600V , ID = 3A  RDS(ON) =3.
6Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-free  Ultra low gate charge ( typical 10 nC )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N60 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg...


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