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BCR185L3

Infineon Technologies AG
Part Number BCR185L3
Manufacturer Infineon Technologies AG
Description PNP Silicon Digital Transistor
Published Mar 23, 2005
Detailed Description BCR185.../SEMB9 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built ...
Datasheet PDF File BCR185L3 PDF File

BCR185L3
BCR185L3

Overview
BCR185.
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/SEMB9 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 47kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR185/F/L3 BCR185T/W C 3 BCR185S/U SEMB9 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type Marking Pin Configuration Package BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9 WNs WNs WN WNs WNs WNs WNs WN 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-14-2004 BCR185.
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/SEMB9 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR185 TS ≤ 102°C BCR185F, TS ≤ 128°C BCR185L3, TS ≤ 135°C BCR185S, T S ≤ 115°C BCR185T, TS ≤ 109°C BCR185U, TS ≤ 118°C BCR185W, TS ≤ 124°C SEMB9, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 6 20 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 .
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150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 Jun-14-2004 BCR185.
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/SEMB9 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0,5 0,5 7 0,19 10 0,21 100 167 0,3 1 1,4 13 0,24 kΩ Collector-base cutoff current VCB = 40 V, IE =...


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