MSP0515D
-55V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-55V,ID =-15A RDS(ON) <80mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● DC-...
