N-Channel Enhancement Mode Power MOSFET
Description
MSN2312
20V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Lead Free
Application
● Battery protection ● Load switch ● Power management
PIN Configuration
Marking and pi...
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