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BCR8UM

Mitsubishi Electric Semiconductor
Part Number BCR8UM
Manufacturer Mitsubishi Electric Semiconductor
Description Triac
Published Mar 23, 2005
Detailed Description MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR8UM OUTLINE DRAWIN...
Datasheet PDF File BCR8UM PDF File

BCR8UM
BCR8UM

Overview
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR8UM OUTLINE DRAWING Dimensions in mm 2.
8 ± 0.
2 10.
2 4.
5 1.
27 15.
5 V φ3.
8 ± 0.
2 13.
0 MIN 4.
2 MAX TYPE NAME VOLTAGE CLASS 1.
4 0.
8 2.
54 0.
6 2.
6 ± 0.
4 2.
54 ŒŽ V Measurement point of ¡IT (RMS) .
.
8A ¡VDRM .
.
400V/600V ¡IFGT !, I RGT !, IRGT # .
.
.
15mA ¡Viso .
.
1500V APPLICATION Light dimmer  Œ T1 TERMINAL  T2 TERMINAL Ž Ž GATE TERMINAL TO-220 Œ MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine full wave 360° conduction, Tc=94 °C V3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 8 80 26 5 0.
5 10 2 –40 ~ +125 –40 ~ +125 4.
5 case temperature Unit A A A2s W W V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case 2.
3 1500 V1.
Gate open.
Feb.
1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD R th (j-c) Gate non-trigger voltage Thermal resistance Gate trigger current V 2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125°C, VD=1/2VDRM Junction to case V3 V4 Tj=25 °C, VD =6...


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