P-Channel MOSFET
Description
CEC3P07
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -37A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
G S
8 76 5 Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = ...
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