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CEG2108E

CET
Part Number CEG2108E
Manufacturer CET
Description Dual N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEG2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8.5A, RDS(ON) = 14mΩ @VGS...
Datasheet PDF File CEG2108E PDF File

CEG2108E
CEG2108E

Overview
CEG2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8.
5A, RDS(ON) = 14mΩ @VGS = 10V.
RDS(ON) = 15mΩ @VGS = 4.
5V.
RDS(ON) = 20mΩ @VGS = 2.
5V.
RDS(ON) = 28mΩ @VGS = 1.
8V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TSSOP-8 for Surface Mount Package.
G2 S2 S2 D TSSOP-8 G1 S1 S1 D D *1K G1 *1K G2 S1 *Typical value by design D1 S1 2 S1 3 G1 4 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 8.
5 IDM 34 Maximu...


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