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CEZ3R02

CET
Part Number CEZ3R02
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEZ3R02 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 135A, RDS(ON) = 2.3mΩ @VGS = 10...
Datasheet PDF File CEZ3R02 PDF File

CEZ3R02
CEZ3R02

Overview
CEZ3R02 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 135A, RDS(ON) = 2.
3mΩ @VGS = 10V.
RDS(ON) = 3.
8mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DDDD GSSS PR-PACK (5*6) DD D D 8 7 65 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Continuous Drain Current-Pulsed a Drain Current-Pulsed a ID @TA ID @TC IDM @TA IDM @TC 36 135 144 540 Maximum Power Dissipation PD 83 Single Pulsed Aval...


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