DatasheetsPDF.com

CEZ3R03

CET
Part Number CEZ3R03
Manufacturer CET
Description N-Channel MOSFET
Published Jun 12, 2018
Detailed Description CEZ3R03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 85A, RDS(ON) = 4.0mΩ @VGS = 10V...
Datasheet PDF File CEZ3R03 PDF File

CEZ3R03
CEZ3R03

Overview
CEZ3R03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 85A, RDS(ON) = 4.
0mΩ @VGS = 10V.
RDS(ON) = 6.
0mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DDDD GSSS PR-PACK (5*6) DD D D 8 7 65 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 85 IDM 340 Maximum Power Dissipation PD 48 Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range EAS IAS TJ,Tstg 125 50 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient b Symbol RθJC RθJA Limit 2.
6 20 Units V V A A W mJ A C Units C/W C/W This is preliminary information on a new product in development now ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)