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CET3301

CET
Part Number CET3301
Manufacturer CET
Description P-Channel MOSFET
Published Jun 12, 2018
Detailed Description CET3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.3A, RDS(ON) = 35mΩ @VGS = -10V. RDS(ON) = ...
Datasheet PDF File CET3301 PDF File

CET3301
CET3301

Overview
CET3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.
3A, RDS(ON) = 35mΩ @VGS = -10V.
RDS(ON) = 53mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
SOT-223 package.
D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID -7.
3 IDM -29 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol R...


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