DatasheetsPDF.com

VSO007N06MS

Vanguard Semiconductor
Part Number VSO007N06MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead pla...
Datasheet PDF File VSO007N06MS PDF File

VSO007N06MS
VSO007N06MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSO007N06MS 60V/18A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5V ID 60 V 6 mΩ 7 mΩ 18 A SOP8 Part ID VSO007N06MS Package Type SOP8 Marking Tape and reel information 007N06M 3000pcs/reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C MSL TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Rθ JC Rθ JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating 60 2.
6 18 11 72 3.
1 ±20 Level 3 -55 to 150 Typical 24 40 Unit V A A A A W V °C Uni...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)