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VS3622DP2

Vanguard Semiconductor
Part Number VS3622DP2
Manufacturer Vanguard Semiconductor
Description Dual N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switc...
Datasheet PDF File VS3622DP2 PDF File

VS3622DP2
VS3622DP2

Overview
Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VS3622DP2 30V/42A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID 30 V 7.
5 mΩ 11 mΩ 42 A PDFN5x6 Part ID VS3622DP2 Package Type PDFN5x6 Marking 3622DP2 Tape and reel information 3000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Body-Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal Resistance...


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