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VSP012N12MS

Vanguard Semiconductor
Part Number VSP012N12MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4...
Datasheet PDF File VSP012N12MS PDF File

VSP012N12MS
VSP012N12MS

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.
5 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP012N12MS 120V/63A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5V ID 120 V 12.
8 mΩ 13.
8 mΩ 63 A PDFN5x6 Part ID VSP012N12MS Package Type PDFN5x6 Marking Tape and reel information 012N12M 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ Drain-Source Breakdown Voltage Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ID Continuous Drain current@VGS=10V IDM Pulse Drain Current Tested ① PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance Junction-Ambient Drain-Source Avalanche Ratings ...


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