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VSD018N03MS

Vanguard Semiconductor
Part Number VSD018N03MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested...
Datasheet PDF File VSD018N03MS PDF File

VSD018N03MS
VSD018N03MS

Overview
Features  N-Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD018N03MS 30V/30A N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.
5 V ID 30 V 16 mΩ 22 mΩ 30 A TO-252 Part ID Package Type VSD018N03MS TO-252 Marking 018N03M Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TC =25°C TC =10...


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