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VSD160N10MS

Vanguard Semiconductor
Part Number VSD160N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead pla...
Datasheet PDF File VSD160N10MS PDF File

VSD160N10MS
VSD160N10MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSD160N10MS 100V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.
5 V ID 100 V 150 mΩ 165 mΩ 8A TO-252 Part ID VSD160N10MS Package Type TO-252 Marking 160N10 Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage ...


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