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VS3019AD

Vanguard Semiconductor
Part Number VS3019AD
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Swit...
Datasheet PDF File VS3019AD PDF File

VS3019AD
VS3019AD

Overview
Features Ron(typ.
)=25 mΩ @VGS=10V Ron(typ.
)=35 mΩ @VGS=4.
5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3019AD 30V/19A N-Channel Advanced Power MOSFET Description VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance.
And fast switching speed and improved transfer effective .
These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
TO-252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG Drain-Source Breakdown Voltage Maximum Junction Temperature Stora...


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