N-Channel Trench Power MOSFET
CSD40N160
General Description
The CSD40N160 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
● VDS = 40V,ID =30A RDS(ON) < 20mΩ @ VGS =10V RDS(ON) < 34mΩ @ VGS =4.5V
● High P...
