DatasheetsPDF.com

TH58NYG3S0HBAI6

Part Number	TH58NYG3S0HBAI6
Manufacturer	Toshiba
Description	8-GBIT (1G x 8-BIT) CMOS NAND E2PROM
Published	Jul 6, 2018
Detailed Description	TH58NYG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTI...
Datasheet	TH58NYG3S0HBAI6 PDF File

Overview

TH58NYG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NYG3S0HBAI6 is a single 1.
8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes  16 Kbytes: 4352 bytes  64 pages).
The TH58NYG3S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density n...

Similar Datasheet

TH58NYG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM - Toshiba
TH58NYG3S0HBAI6 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM - Toshiba

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)