SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Description
2N5556 (SILICON)
thru
2N5558
SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_
Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz
Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) Low Input Capacitance - Ciss = 6.0 pF (Max)
SILICON N-CHANNEL JUNCTION FIELD-EFFECT
TRANSISTORS
T...
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