DatasheetsPDF.com

2N5208

ETC
Part Number 2N5208
Manufacturer ETC
Description PNP SILICON ANNULAR TRANSISTOR
Published Jul 14, 2018
Detailed Description 2N5208 (SILICON) PNP SILICON ANNULAR TRANSISTOR · . . designed for general purpose RF amplifier applications in the fre...
Datasheet PDF File 2N5208 PDF File

2N5208
2N5208

Overview
2N5208 (SILICON) PNP SILICON ANNULAR TRANSISTOR · .
.
designed for general purpose RF amplifier applications in the frequency range up to 300 MHz.
<• Low Collector-Base Time Constant - rb 'Cc lOps • Low Noise Figure N.
F.
= 3.
0dB max @ 100 MHz • High Power Gain - Gpe = 22 dB min @100 MHz • CompleteY-Parameter Curves • Low Leakage Current - ICBO< 10 nAdc@VCB= 10 V • Stability Factor Curves - For Direct Circuit DeSign PNP SILICON SWITCHING AND AMPLIFIER TRANSISTOR *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 2SoC Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO Vca VEa IC Po Po TJ.
Tstg Value 25 30 3.
0 50 350 2.
8 1.
0 B.
O -55 to +150 Unit Vdc Vdc Vdc mAde mW mW/oC Watt mWf'C °c THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)