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S1375

Toshiba
Part Number S1375
Manufacturer Toshiba
Description NPN Transistor
Published Jul 16, 2018
Detailed Description S1375 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATION...
Datasheet PDF File S1375 PDF File

S1375
S1375

Overview
S1375 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES .
Complementary to S1376 Unit in mm &—.
.
9.
9MAX.
03.
2±Oig , '" %.
,* 3.
n II MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VcBO v CEO v EBO ic IB PC T J T stg RATING 80 80 5 750 500 1.
5 150 -55-150 UNIT V V V mA mA W °C °C I 1 2 Z\ 9.
9 MAX.
1.
EMITTER 2.
BASE 3.
COLLECTOR (HEAT SINK? TOSHIBA Weight : 1.
4g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage iCBO iEBO V CB =30V, I E =0 V EB =5V, I C =0 v (BR) CEO I c =10mA, I B =0 DC Current Gain Collector-Emitter Saturation Voltage h FE(l) h FE(2) v CE(sat) Base-Emitter Voltage VBE Transition Frequency...


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