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BU126

Part Number	BU126
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 16, 2018
Detailed Description	: SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED ...
Datasheet	BU126 PDF File

Overview

: SILICON NPN TRIPLE DIFFUSED MESA TYPE 33 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS.
FEATURES .
High Breakdown Voltage : VcES = 750V .
Low Saturation Voltage : V CE ( sat )=5V(Max.
) at Ic=4A, Ifi=lA • High speed : tf=0.
15ys (Typ.
) Unit in mm s025OMAX.
Zfel.
0 MAX.
, +ao9 01.
0—a 03 TJT-l- 30.
2±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Emitter Voltage Collector Current DC Peak VCES VCEX (-V BE =1.
5V VCEO IC ICM -ICM RATING 750 750 300 UNIT 1.
BASE 2.
EMITTER COLLECTOR ^CASE) TO — TOSHIBA TC— 3 , TB— 2— 21B1A Mounting Kit No.
AC42C Weight : 17.
0g DC IB Base Current Peak IBM _...

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