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2SC3298

Toshiba
Part Number 2SC3298
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 17, 2018
Detailed Description : 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPL...
Datasheet PDF File 2SC3298 PDF File

2SC3298
2SC3298

Overview
: 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES .
High Transition Frequency : fT=100MHz (Typ .
.
Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX.
7.
0 0Z.
2± 0.
2 / /r\r '-ra J s d :.
: X < oL +i s to MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage 2SC3298 2SC3298A 2SC3298B Collector-Emitter Voltage 2SC3298 2SC3298A 2SC3298B Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB Tstg RATING 160 180 200 160 180 200 UNIT 1.
5 0.
15 20 150 -55-150 1 w1.
4 + 025 w0.
76- 0.
15 1.
2 U5 S 2.
54±0.
25 2.
54±0.
25 mo X dd < s +^ 1 :: h1 \ 2 h\ .
1.
BASE 2.
COLLECTOR 3.
EMITTER JEDEC - EIAJ - TOSHIBA 2-10L1 A Weight 2.
U ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ...


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