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2SC1626

Toshiba
Part Number 2SC1626
Manufacturer Toshiba
Description SILICON NPN TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEAT...
Datasheet PDF File 2SC1626 PDF File

2SC1626
2SC1626

Overview
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=80V Complementary to 2SA816.
Unit in mm 10.
3 MAX 0Z.
6 ±0.
2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RAINGS VCBO v CEO Vebo ic IE PC T.
1 Tste 80 80 5 750 -750 1.
5 150 -55M.
50 UNIT V V V mA mA W °C °C 1.
BASE Z.
COLLECTOR (HEAT SINK) 3.
EMITTER JEDEC TO -230AB EIAJ TOSHIBA SC -46 2-10A1A Mounting Kit NO.
AC75 Weight : 1 .
9g ELECTRICAL CHARACTE...


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