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2SC2098

Part Number	2SC2098
Manufacturer	Toshiba
Description	SILICON NPN TRANSISTOR
Published	Jul 17, 2018
Detailed Description	SILICON NPN EPITAXIAL PLANAR TYPE 2SC2098 CITIZEN BAND AND HAM BAND UP TO 50MHz RF POWER AMPLIFIER APPLICATIONS. (LOW ...
Datasheet	2SC2098 PDF File

Overview

SILICON NPN EPITAXIAL PLANAR TYPE 2SC2098 CITIZEN BAND AND HAM BAND UP TO 50MHz RF POWER AMPLIFIER APPLICATIONS.
(LOW SUPPLY VOLTAGE USE) FEATURES .
Recommended for 12W(PEP) SSB Citizen Band Transceiver Applications.
.
High Power Gain : Gpe=11.
8dB(Typ.
) @ f=28MHz .
Designed to Withstand Load Mismatch at All Phase Angles with Infinite VSWR at 17 Volts.
Unit in mm 10.
3 MAX, ffa6:r0.
2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage (R EB =10n) Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCER Vebo ic IE PC Tj T stg RATING 70 70 4 6 -6 20 150 -55-150 UNIT V V V 1.
BASE A 2.
COLLECTOR (HEAT SINK) A 3.
EMITTER TO— 220AB W TOSHIBA °C Weight : 1.
9g °c ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vo...

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