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2SC2181

Toshiba
Part Number 2SC2181
Manufacturer Toshiba
Description SILICON NPN TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P o =40W (Min.) (...
Datasheet PDF File 2SC2181 PDF File

2SC2181
2SC2181

Overview
SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : .
Output Power : P o =40W (Min.
) ( f=175MHz, VCC =13.
5V, P-j=10W ) .
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=13.
5V, Pi=10W, f=175MHz 2-J2fc.
2±Ql Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25 °C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic PC L stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Base Breakdown Voltage ICBO V(BR)CB0 Collector-Emitter Breakdwon ...


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