2SB755
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES
High Breakdown Voltage VCEO=-150V (Min.) High Transition Frequency : f T=20MHz (Typ.) Complementary to 2SD845. Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC Collector-Base Voltage C...
