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2SB1019

Toshiba
Part Number 2SB1019
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description 9 : 2SB1 01 1« SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER ...
Datasheet PDF File 2SB1019 PDF File

2SB1019
2SB1019

Overview
9 : 2SB1 01 1« SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm POWER AMPLIFIER APPLICATIONS.
FEATURES .
Low Collector Saturation Vol tage : VcE(sat)=-0,4V(Max.
) a t I C=-4A .
Complementary to 2SD1412 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO Vebo ic IB PC T.
i Tstg ELECTRICAL CHARACTERISTICS (Ta =25°C) RATING -70 -50 UNIT V V -5 V -7 A -1 A 2.
0 W 30 150 -55-150 °C °C 10.
3MAX.
—7.
0 .
h 03.
2±O.
2 / ' f -i r V) d \A n d ...


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