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BC860C

Infineon Technologies AG
Part Number BC860C
Manufacturer Infineon Technologies AG
Description PNP Silicon AF Transistors
Published Mar 23, 2005
Detailed Description PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter satu...
Datasheet PDF File BC860C PDF File

BC860C
BC860C

Overview
PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847.
.
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-BC850.
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(NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) BC857.
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-BC860.
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1BC857BL3 is not qualified according AEC Q101 Type BC857A BC857B BC857BL3* BC857BW BC857C BC857CW BC858A BC858B BC858BW BC858C BC858CW BC859C BC860B BC860BW BC860CW Marking 3Es 1=B 3Fs 1=B 3F 1=B 3Fs 1=B 3Gs 1=B 3Gs 1=B 3Js 1=B 3Ks 1=B 3Ks 1=B 3Ls 1=B 3Ls 1=B 4Cs 1=B 4Fs 1=B 4Fs 1=B 4Gs 1=B Pin Configuration 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - 2=E 3=C - - - * Not qualified according AEC Q101 Package SOT23 SOT23 TSLP-3-1 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT323 1 2011-09-19 BC857.
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-BC860.
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Maximum Ratings Parameter Collector-emitter voltage BC857.
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, BC860.
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BC858.
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, BC859.
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Symbol VCEO Value 45 30 Collector-base voltage BC857.
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, BC860.
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BC858.
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, BC859.
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Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Total power dissipation TS ≤ 71 °C, BC857-BC860 TS ≤ 135 °C, BC857BL3 TS ≤ 124 °C, BC857W-BC860W Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BC857-BC860 BC857BL3 BC857W-BC860W VCBO VEBO IC ICM Ptot Tj Tstg Symbol RthJS 50 30 5 100 200 330 250 250 150 -65 .
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150 Value ≤ 240 ≤ 60 ≤ 105 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 2 2011-09-19 BC857.
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-BC860.
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Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BC857.
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, BC860.
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IC = 10 mA, IB = 0 , BC858.
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