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ITCH27100B2

Innogration

High Power RF LDMOS FET


Description
Innogration (Suzhou) Co., Ltd. Document Number: ITCH27100B2 Preliminary Datasheet V1.0 2500MHz-2700MHz, 100W, 28V High Power RF LDMOS FETs Description The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz. It Can be used in Class AB/...



Innogration

ITCH27100B2

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