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ITCH24100B2E

Innogration
Part Number ITCH24100B2E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH24100B2 Preliminary Datasheet V1.0 2300MHz-2400MHz, 100W, 28V High...
Datasheet PDF File ITCH24100B2E PDF File

ITCH24100B2E
ITCH24100B2E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH24100B2 Preliminary Datasheet V1.
0 2300MHz-2400MHz, 100W, 28V High Power RF LDMOS FETs Description The ITCH24100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2300 to 2400 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH24100B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 900 mA, Pulse CW, Pulse Width=100 us, Duty cycle=20% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 2300 MHz 18.
2 50.
8 52.
8 51.
5 54.
2 2350 MHz 18.
3 50.
6 52.
8 51.
4 54.
6 2400 MHz 18.
7 50.
1 51.
8 51.
0 54.
0 ITCH24100B2E Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 900 mA, Pout= 41dBm Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input S...


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