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ITCH20210B2E

Innogration
Part Number ITCH20210B2E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High...
Datasheet PDF File ITCH20210B2E PDF File

ITCH20210B2E
ITCH20210B2E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH20210B2 Preliminary Datasheet V1.
0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Description The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20210B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Frequency Gp P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 1805  19.
2 53.
2 54.
1 58.
5 1842.
5...


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